N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 46 A, 30 V RDS(ON)=

文件：119.89 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel, Logic Level, PowerTrench MOSFET

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

文件：352.27 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 46 A, 30 V RDS(ON)=

文件：119.89 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 30V, ID= 80A RDS(ON)

文件：2.11257 Mbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

N-Channel 30-V (D-S) MOSFET

文件：1.02 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體