絲?。?strong>FDD6637；Package：TO-252；-30V P-Channel MOSFET

Features RDS(ON) =11.6mW(VGS =-10 V) RDS(ON) =18mW(VGS =-4.5 V) High performance trench technology for extremely low RDS(ON) RoHS Compliant VDSS = -30V

文件：417.43 Kbytes 頁(yè)數(shù)：8 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?strong>FDD6637；Package：TO-252；-30V P-Channel MOSFET

Applications · Inverter · Power Supplies Features · RDS(ON) =11.6mW(VGS =-10 V) · RDS(ON) =18mW(VGS =-4.5 V) · High performance trench technology for extremely low RDS(ON) · RoHS Compliant · VDSS = -30V

文件：343.94 Kbytes 頁(yè)數(shù)：8 Pages

EVVOSEMI

翊歐

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -30V, ID= -60A RDS(ON)

文件：973.75 Kbytes 頁(yè)數(shù)：5 Pages

BYCHIP

百域芯

35V P-Channel PowerTrench-R MOSFET

General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Features · –55 A, –35 V RDS(ON) = 11.6 mW @ VGS =

文件：111.67 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

35V P-Channel PowerTrench MOSFET

文件：119.87 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 30 V (D-S) MOSFET

文件：999.21 Kbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?strong>FDD6637；Package：TO-252；P-Channel PowerTrench? MOSFET

文件：455.06 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

P 溝道，PowerTrench? MOSFET，35V，-55A，11.6mΩ

此P溝道MOSFET使用飛兆半導(dǎo)體專(zhuān)有PowerTrench技術(shù)生產(chǎn)，具有低Rdson和優(yōu)化的Bvdss能力，在各種應(yīng)用中都具有優(yōu)異的性能。 ?-55 A，-35 V\n?RDS(ON) = 11.6 mΩ @ VGS = -10 V\n?RDS(ON) = 18 mΩ @ VGS = -4.5 V\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDSON\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

35V P-Channel PowerTrench MOSFET

文件：119.87 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel PowerTrench? MOSFET -35V, -21A, 18m廓

文件：334.6 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體