絲印：FDD6680AS；Package：TO-252；30V N -Channel MOSFET

Features ? Includes SyncFET Schottky body diode ? Low gate charge (21nC typical) ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability ? VDS(V) = 30V ? ID =50A (VGS = 10V) ? RDS(ON)

文件：498.11 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

N-channel Advanced Mode Power MOSFET

Features ? VDS= 40V, ID= 150A RDS(ON)

文件：1.0433 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

文件：123.02 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.94 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

30V N-Channel PowerTrench? SyncFET?

文件：332.08 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

文件：123.02 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N-Channel PowerTrench? SyncFET?

文件：332.08 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? SyncFET? MOSFET，30V，55A，10.5mΩ

FDD6680AS設(shè)計用于替代同步DC/DC電源中的單一MOSFET和肖特基二極管。 此30V MOSFET設(shè)計用于最大限度地提高功率轉(zhuǎn)換效率，提供低RDS(ON)和低柵極電荷。 FDD6680AS包含使用飛兆半導(dǎo)體單片SyncFET技術(shù)的集成肖特基二極管。 FDD6680AS在同步整流器中作為低端開關(guān)的性能與FDD6680A并聯(lián)一個肖特基二極管的性能相似。 ?55A，30V\n?RDS(ON) = 10.5 mΩ @ VGS = 10 V\n?RDS(ON) = 13.0 mΩ @ VGS = 4.5 V\n?包含SyncFET肖特基體二極管\n?低柵極電荷（典型值21 nC）。\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體