N-Channel PowerTrench? MOSFET 40V, 50A, 5.2mOhm

Features RDS(ON)= 4m?(Typ), VGS= 10V, ID=50A Qg(10)= 89nC (Typ), VGS=10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant

文件：343.4 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=155A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.72 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Advanced Mode Power MOSFET

Features ? VDS= 40V, ID= 150A RDS(ON)

文件：1.14205 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-Channel PowerTrench? MOSFET 40V, 50A, 5.2m?

文件：324.88 Kbytes 頁數(shù)：7 Pages

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仙童半導體

絲印：FDD8444；Package：TO-252AA；N-Channel PowerTrench? MOSFET

文件：719.75 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

40V N溝道PowerTrench? MOSFET

N-Channel PowerTrench? MOSFET, 40V, 50A, 5.2mΩ ?RDS(ON) = 4mΩ（典型值），VGS = 10V，ID=50A\n?Qg(10) = 89nC（典型值），VGS = 10V\n?低米勒電荷\n?低Qrr體二極管\n?UIS能力（單脈沖/重復脈沖）\n?符合AEC Q101\n?符合RoHS標準;

ONSEMI

安森美半導體

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 40V, ID= 80A RDS(ON)

文件：2.04001 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

N-Channel PowerTrench? MOSFET

Features Typ rDS(on) = 3.8mΩ at VGS = 5V, ID = 50A Typ Qg(tot)= 46nC at VGS= 5V Low Miller Charge Low QrrBody Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant

文件：282.07 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

N-Channel PowerTrench? MOSFET 40V, 50A, 5.2m?

文件：324.88 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

N-Channel PowerTrench? MOSFET 40V, 50A, 5.2m廓

文件：300.66 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體