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          首頁 >FDD6644>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDD6644

          30V N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 67 A, 30

          文件:84.18 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDD6644

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=67A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

          文件:351.61 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FDP6644

          30V N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @

          文件:80.46 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDP6644

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

          文件:332.8 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FDP6644S

          30V N-Channel PowerTrench SyncFET?

          General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky di

          文件:160.47 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號:

            FDD6644

          • 功能描述:

            MOSFET 30V N-Ch PowerTrench

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號品牌批號封裝庫存備注價格
          FAIRCHILD/FSC/仙童飛兆半
          24+
          TO-252
          8850
          新進(jìn)庫存/原裝
          詢價
          仙童
          05+
          TO-252
          12000
          原裝進(jìn)口
          詢價
          FAI
          25+23+
          TO252
          75762
          絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
          詢價
          FAIRCHILD
          18+
          TO-252
          41200
          原裝正品,現(xiàn)貨特價
          詢價
          FAIRCHILD
          25+
          SOT252
          30000
          代理全新原裝現(xiàn)貨,價格優(yōu)勢
          詢價
          FAIRCHILD/仙童
          23+
          D-PAKTO-252
          24190
          原裝正品代理渠道價格優(yōu)勢
          詢價
          FAIRCHILD
          25+
          D-PAK/ TO-252
          32500
          普通
          詢價
          FAIRCHILD/仙童
          2447
          SOT252
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          FAIRCHILD/仙童
          21+
          D-PAKTO-252
          30000
          優(yōu)勢供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅
          詢價
          FAIRCHILD/仙童
          25+
          TO-252-2
          5000
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價
          更多FDD6644供應(yīng)商 更新時間2026-1-19 10:50:00
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