30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features ·

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=84A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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N 溝道 PowerTrench? MOSFET，30V，84A，5mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關PWM控制器來改進DC/DC轉換器整體功效而設計的。 已針對低柵極電荷、低rDS(ON) 和高速開關進行了優(yōu)化。 ?84 A，30 V\n?RDS(ON) = 5 mΩ @ VGS = 10 V\n?RDS(ON) = 6 mΩ @ VGS = 4.5 V\n?低柵極電荷\n?快速開關速度\n?高性能溝道技術可實現極低的RDS(ON);

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=88A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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30V N-Channel PowerTrench SyncFET

General Description The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky d

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