500V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=6A@ TC=25℃ ·Drain Source Voltage : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無錫固電

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

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FAIRCHILD

仙童半導體

500V N-Channel MOSFET

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FAIRCHILD

仙童半導體

Improved dv/dt capability

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FAIRCHILD

仙童半導體

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

文件：463.96 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

文件：463.96 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

500V N-Channel MOSFET

ONSEMI

安森美半導體

N 溝道，MOSFET，500V，6A，0.9Ω

這些 N 溝道增強型功率場效應晶體管采用飛兆專有的平面條形 DMOS 技術(shù)生產(chǎn)。 這一先進技術(shù)是專為最大限度地降低導通電阻，提供卓越的開關(guān)性能，以及在雪崩擊穿和換相情況下承受高能量脈沖而開發(fā)的。 這些器件非常適合高效開關(guān)模式電源和有源功率因數(shù)校正。 ? 6A, 500V\n? RDS(on) = 0.9Ω @ VGS = 10 V\n? Low gate charge (typical 12.8 nC)\n? Low Crss (typical 9 pF)\n? Fast switching\n? 100% avalanche tested\n? Improved dv/dt capability\n? Qualified to AEC Q101\n? RoHS Compliant;

ONSEMI

安森美半導體