| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t 文件：263.14 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A ) VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：190.33 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：208.86 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t 文件：263.14 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：166.67 Kbytes 頁數(shù)：5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-CHANNEL POWER MOSFETS FEATURES ? Low RDs 文件：213.26 Kbytes 頁數(shù)：5 Pages | SAMSUNG 三星 | SAMSUNG | ||
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：68.22 Kbytes 頁數(shù)：7 Pages | INTERSIL | INTERSIL | ||
Nanosecond Switching Speeds DESCRIPTION ? Drain Current ID=8A@ TC=25℃ ? Drain Source Voltage- : VDSS= 100V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ? Nanosecond Switching Speeds APPLICATIONS ? Switching power supplies ? Motor controls,Inverters and Choppers ? Audio amplifiers and high energy pul 文件：48.36 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
263 |
7000 |
詢價(jià) | |||
IR |
1725+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
IR-韓國產(chǎn) |
25+ |
TO-220 |
16402 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
ST |
22+ |
原廠原封 |
16900 |
電子元器件采購降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
IR |
2022+ |
45 |
只做原裝,價(jià)格優(yōu)惠,長期供貨。 |
詢價(jià) | |||
Vishay |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價(jià)格 現(xiàn)貨或訂貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
55000 |
原裝正品現(xiàn)貨,誠信經(jīng)營。假一罰十 |
詢價(jià) | ||
INFINEON/英飛凌 |
22+ |
SOP-6 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
