Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ? Flame-retardant coating and color band identification ? Uniform coating is excellent for automatic insertion ? Available in bulk, ammo and reel pack per EIA RS/296 ? Superior electrical specifications high Q and self resonant frequency, low DC resistance, high rated DC current TEST

文件：74.26 Kbytes 頁數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ? Flame-retardant coating and color band identification ? Uniform coating is excellent for automatic insertion ? Available in bulk, ammo and reel pack per EIA RS/296 ? Superior electrical specifications high Q and self resonant frequency, low DC resistance, high rated DC current TEST

文件：74.26 Kbytes 頁數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

The HEXFET? technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis tance combined with high transconductance; superior reverse energy and d

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IRF

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

Product Summary The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

文件：146.64 Kbytes 頁數(shù)：7 Pages

IRF

Simple Drive Requirements

DESCRIPTION ? Drain Current ID=44A@ TC=25℃ ? Drain Source Voltage- : VDSS= 60V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ? Simple Drive Requirements APPLICATIONS ? Switching power supplies ? Motor controls,Inverters and Choppers ? Audio amplifiers and high en

文件：48.34 Kbytes 頁數(shù)：2 Pages

ISC

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

60V, N-CHANNEL The HEXFET? technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis tance combined with high transconductance; superior

文件：146.17 Kbytes 頁數(shù)：7 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

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IRF

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ? Flame-retardant coating and color band identification ? Uniform coating is excellent for automatic insertion ? Available in bulk, ammo and reel pack per EIA RS/296 ? Superior electrical specifications high Q and self resonant frequency, low DC resistance, high rated DC current TEST

文件：74.26 Kbytes 頁數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲?。?a target="_blank" title="Marking" href="/irf100b201/marking.html">IRF100B201；Package：TO-220；100 V N-Channel MOSFET

Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free VDS=100V ID=192A RDS(ON) (at VGS=10V)

文件：844.05 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導(dǎo)體

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 209A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.28mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

文件：341.22 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電