| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：297.24 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤7.5m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati 文件：338.26 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc 文件：302.08 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc 文件：302.08 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc 文件：302.08 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching 文件：429.6 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching 文件：429.6 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching 文件：429.6 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：101.15 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：208.86 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢(xún)價(jià) | ||
IR |
23+ |
263 |
8000 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
23+ |
263 |
7000 |
詢(xún)價(jià) | |||
IR |
25+ |
TO-3P |
18000 |
原廠(chǎng)直接發(fā)貨進(jìn)口原裝 |
詢(xún)價(jià) | ||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢(xún)價(jià) | ||
IR |
25+ |
TO263 |
783 |
旗艦店 |
詢(xún)價(jià) | ||
20+ |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||||
原廠(chǎng) |
2023+ |
模塊 |
600 |
專(zhuān)營(yíng)模塊,繼電器,公司原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
Fairchi |
24+ |
DXPAK |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢(xún)價(jià) | ||
VishayDale |
新 |
5 |
全新原裝 貨期兩周 |
詢(xún)價(jià) |
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