N-CHANNEL POWER MOSFETS

FEATURES ? Low RDs

文件：213.26 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：68.22 Kbytes 頁數(shù)：7 Pages

INTERSIL

Nanosecond Switching Speeds

DESCRIPTION ? Drain Current ID=8A@ TC=25℃ ? Drain Source Voltage- : VDSS= 100V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ? Nanosecond Switching Speeds APPLICATIONS ? Switching power supplies ? Motor controls,Inverters and Choppers ? Audio amplifiers and high energy pul

文件：48.36 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：798.54 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：798.54 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：798.54 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：166.67 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Power Mosfets,

文件：338.75 Kbytes 頁數(shù)：5 Pages

ARTSCHIP

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半導(dǎo)體

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：166.67 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體