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首頁 >IRF>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IRF131	文件：180.59 Kbytes Page：6 Pages	N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件：180.59 Kbytes 頁數(shù)：6 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRF131	文件：211.72 Kbytes Page：5 Pages	N-CHANNEL POWER MOSFETS FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard) 文件：211.72 Kbytes 頁數(shù)：5 Pages	SAMSUNG 三星	SAMSUNG
IRF1310N	文件：96.76 Kbytes Page：8 Pages	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：96.76 Kbytes 頁數(shù)：8 Pages	IRF	IRF
IRF1310N	文件：338.58 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.036? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：338.58 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
IRF1310NL	文件：1.16562 Mbytes Page：10 Pages	Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.16562 Mbytes 頁數(shù)：10 Pages	KERSEMI	KERSEMI
IRF1310NL	文件：156.84 Kbytes Page：10 Pages	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：156.84 Kbytes 頁數(shù)：10 Pages	IRF	IRF
IRF1310NLPBF	文件：725.79 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：725.79 Kbytes 頁數(shù)：11 Pages	IRF	IRF
IRF1310NS	文件：1.06153 Mbytes Page：10 Pages	Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.06153 Mbytes 頁數(shù)：10 Pages	KERSEMI	KERSEMI
IRF1310NS	文件：156.84 Kbytes Page：10 Pages	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：156.84 Kbytes 頁數(shù)：10 Pages	IRF	IRF
IRF1310NSPBF	文件：725.79 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：725.79 Kbytes 頁數(shù)：11 Pages	IRF	IRF

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技術(shù)參數(shù)

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 m?
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF	IR	22+	263	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF	IR	23+	263	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF	IR	23+	263	7000		詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	IRFP3108	IR	25+	TO-3P	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市佳鑫美電子科技有限公司	IRFZ24	SAMSUNG	25+	TO-220	2987	只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!	詢價(jià)
深圳市澳億芯電子科技有限公司	IRF520NSTRLPBF	IR	25+	TO263	783	旗艦店	詢價(jià)
上海金慶電子技術(shù)有限公司	IRF01BH220K	VishayDale	新		5	全新原裝貨期兩周	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRF7101		20+		36800	原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票	詢價(jià)
華富測量(深圳)傳感技術(shù)有限公司	IRFN48N50	原廠	2023+	模塊	600	專營模塊,繼電器,公司原裝現(xiàn)貨	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRFB4410PBF	IR		TO	1100	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)

更多IRF供應(yīng)商更新時(shí)間2026-1-20 14:00:00

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