| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS = 55V RDS(on) = 11m? ID = 85A? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：211.92 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：146.82 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.07508 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：297.24 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：182.65 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：3.0715 Mbytes 頁數(shù)：8 Pages | KERSEMI | KERSEMI | ||
Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.07508 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：146.82 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
技術參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
263 |
7000 |
詢價 | |||
IR |
20+ |
SOP8 |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
INFINEON |
21+ |
標準封裝 |
60 |
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號 |
詢價 | ||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
Infineon(英飛凌) |
2447 |
PQFN3.3X3.38L |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
26+ |
SOP-8 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
Infineon(英飛凌) |
23+ |
標準封裝 |
7000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
IR |
09+ |
TO-220 |
16 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
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