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                >IRF>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          IRF1310S
          Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
          
VDSS = 100V
RDS(on) = 0.04?
ID = 41A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H
          文件：361.9 Kbytes 頁數(shù)：8 Pages
          IRF
          

          IRF1312
          HEXFET Power MOSFET
          
Benefits
? Low Gate-to-Drain Charge to Reduce Switching Losses
? Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
? Fully Characterized Avalanche Voltage and Current
Applications
? High frequency DC-DC converters
? Motor Control
? Uninterru
          文件：226.57 Kbytes 頁數(shù)：11 Pages
          IRF
          

          IRF1312L
          HEXFET Power MOSFET
          
Benefits
? Low Gate-to-Drain Charge to Reduce Switching Losses
? Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
? Fully Characterized Avalanche Voltage and Current
Applications
? High frequency DC-DC converters
? Motor Control
? Uninterru
          文件：226.57 Kbytes 頁數(shù)：11 Pages
          IRF
          

          IRF1312LPBF
          HEXFET Power MOSFET
          
Benefits
? Low Gate-to-Drain Charge to Reduce Switching Losses
? Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
? Fully Characterized Avalanche Voltage and Current
Applications
? High frequency DC-DC converters
? Motor Control
? Uninterru
          文件：275.55 Kbytes 頁數(shù)：11 Pages
          IRF
          

          IRF1312PBF
          HEXFET Power MOSFET
          
Benefits
? Low Gate-to-Drain Charge to Reduce Switching Losses
? Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
? Fully Characterized Avalanche Voltage and Current
Applications
? High frequency DC-DC converters
? Motor Control
? Uninterru
          文件：275.55 Kbytes 頁數(shù)：11 Pages
          IRF
          

          IRF1312S
          HEXFET Power MOSFET
          
Benefits
? Low Gate-to-Drain Charge to Reduce Switching Losses
? Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
? Fully Characterized Avalanche Voltage and Current
Applications
? High frequency DC-DC converters
? Motor Control
? Uninterru
          文件：226.57 Kbytes 頁數(shù)：11 Pages
          IRF
          

          IRF1312SPBF
          HEXFET Power MOSFET
          
Benefits
? Low Gate-to-Drain Charge to Reduce Switching Losses
? Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
? Fully Characterized Avalanche Voltage and Current
Applications
? High frequency DC-DC converters
? Motor Control
? Uninterru
          文件：275.55 Kbytes 頁數(shù)：11 Pages
          IRF
          

          IRF132
          High Power,High Speed Applications
          
DESCRIPTION
? Drain Current ID=12A@ TC=25℃
? Drain Source Voltage- : VDSS= 100V(Min)
? Static Drain-Source On-Resistance : RDS(on) =0.25Ω(Max)
? High Power,High Speed Applications
APPLICATIONS
? Switching power supplies
? UPS
? Motor controls
? High energy pulse circuits.
          文件：48.16 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          IRF132
          N-Channel Power MOSFETs, 20 A, 60-100 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VGS Rated at ±20 V
●
          文件：180.59 Kbytes 頁數(shù)：6 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF132
          N-CHANNEL POWER MOSFETS
          
FEATURES
● Low RDS(on)
● Improved inductive ruggedness
● Fast switching times
● Rugged polysilicon gate cell structure
● Low input capacitance
● Extended safe operating area
● Improved high temperature reliability
● TO-3 package (Standard)
          文件：211.72 Kbytes 頁數(shù)：5 Pages
          SAMSUNG
          三星
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • OPN：
            IRF100B201
          • Qualification：
            Non-Automotive
          • Package name：
            TO220
          • VDS max：
            100 V
          • RDS (on) @10V max：
            4.2 m?
          • ID  @25°C max：
            192 A
          • QG typ @10V：
            170 nC
          • Polarity：
            N
          • VGS(th) min：
            2 V
          • VGS(th) max：
            4 V
          • VGS(th)：
            3 V
          • Technology：
            IR MOSFET?
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



          IR
          		

          22+
          		

          263
          		

          6000
          		

          終端可免費供樣,支持BOM配單
          		
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          IR
          		

          23+
          		

          263
          		

          8000
          		

          專注配單,只做原裝進口現(xiàn)貨
          		
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          IR
          		

          23+
          		

          263
          		

          7000
          		

          		
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          IR
          		

          25+
          		

          TO-3P
          		

          18000
          		

          原廠直接發(fā)貨進口原裝
          		
詢價
          

          



          		

          20+
          		

          		

          36800
          		

          原裝優(yōu)勢主營型號-可開原型號增稅票
          		
詢價
          

          



          SAMSUNG
          		

          25+
          		

          TO-220
          		

          2987
          		

          只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
          		
詢價
          

          



          IR-韓國產(chǎn)
          		

          25+
          		

          TO-220
          		

          16402
          		

          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          		
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          IR
          		

          25+
          		

          TO263
          		

          783
          		

          旗艦店
          		
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          IR
          		

          1745+
          		

          TO-263
          		

          1690
          		

          全新原裝現(xiàn)貨
          		
詢價
          

          



          英飛凌
          		

          23+
          		

          TO-220
          		

          30000
          		

          原裝正品,假一罰十
          		
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            更新時間2026-1-20 14:00:00
        
          
        
          
          
          
            
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