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首頁(yè) >IRF>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRF120	文件：798.54 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF120-123	文件：166.67 Kbytes Page：5 Pages	N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：166.67 Kbytes 頁(yè)數(shù)：5 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRF121	文件：166.67 Kbytes Page：5 Pages	N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：166.67 Kbytes 頁(yè)數(shù)：5 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRF121	文件：213.26 Kbytes Page：5 Pages	N-CHANNEL POWER MOSFETS FEATURES ? Low RDs 文件：213.26 Kbytes 頁(yè)數(shù)：5 Pages	SAMSUNG 三星	SAMSUNG
IRF121	文件：68.22 Kbytes Page：7 Pages	8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：68.22 Kbytes 頁(yè)數(shù)：7 Pages	INTERSIL	INTERSIL
IRF121	文件：798.54 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF121	文件：798.54 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF121	文件：798.54 Kbytes Page：3 Pages	IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF122	文件：798.54 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF122	文件：798.54 Kbytes Page：3 Pages	IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs 文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI

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技術(shù)參數(shù)

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 m?
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF	IR	22+	263	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF	IR	23+	263	8000	專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF	IR	23+	263	7000		詢價(jià)
深圳市佳鑫美電子科技有限公司	IRFZ24	SAMSUNG	25+	TO-220	2987	只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	IRFP3108	IR	25+	TO-3P	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRF7101		20+		36800	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票	詢價(jià)
深圳市澳億芯電子科技有限公司	IRF520NSTRLPBF	IR	25+	TO263	783	旗艦店	詢價(jià)
上海金慶電子技術(shù)有限公司	IRF01BH220K	VishayDale	新		5	全新原裝貨期兩周	詢價(jià)
華富測(cè)量(深圳)傳感技術(shù)有限公司	IRFN48N50	原廠	2023+	模塊	600	專(zhuān)營(yíng)模塊,繼電器,公司原裝現(xiàn)貨	詢價(jià)
北京逸博微科技有限公司	IRF2805STRLPBF	IR	1745+	TO-263	1690	全新原裝現(xiàn)貨	詢價(jià)

更多IRF供應(yīng)商更新時(shí)間2026-1-19 10:04:00

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