| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/irf100p218/marking.html">IRF100P218；Package：PG-TO247-3；MOSFET StrongIRFETa Features ? Very low RDS(on) ? Excellent gate charge x RDS(on) (FOM) ? Optimized Qrr ? 175°C operating temperature ? Product validation according to JEDEC standard ? Optimized for broadest availability from distribution partners 文件：1.14013 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
MOSFET StrongIRFETa Features ? Very low RDS(on) ? Excellent gate charge x RDS(on) (FOM) ? Optimized Qrr ? 175°C operating temperature ? Product validation according to JEDEC standard ? Optimized for broadest availability from distribution partners 文件：1.14013 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/100pw219/marking.html">100PW219；Package：PG-TO247-3；MOSFET StrongIRFET? Power MOSFET, 100 V Features ? Very low on?resistance Rds(on) ? Excellent gate charge x Rds(on) (FOM) ? Optimized Qrr ? 175°C operating temperature ? Product validation according to JEDEC standard ? Optimized for broadest availability from distribution partners Benefits ? Reduced conduction losses ? Ideal 文件：1.03327 Mbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel Power MOSFETs, 27 A, 60-100V
文件：146.34 Kbytes 頁數(shù)：5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? ? Advanced Process Technology ? Ultra Low On-Resistance ? Dynamic dv/dt Rating ? 175°C Operating Temperature ? Fast Switching ? Fully Avalanche Rated Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex 文件：195.51 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：123.94 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：218.72 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.86 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：123.94 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：218.72 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
技術參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
263 |
7000 |
詢價 | |||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
Fairchi |
24+ |
DXPAK |
6000 |
進口原裝正品假一賠十,貨期7-10天 |
詢價 | ||
英飛凌 |
23+ |
TO-220 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
25+ |
TO263 |
783 |
旗艦店 |
詢價 | ||
0 |
詢價 | ||||||
VishayDale |
新 |
5 |
全新原裝 貨期兩周 |
詢價 |
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