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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          IRF130
          N-Channel Power MOSFETs, 20 A, 60-100 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VGS Rated at ±20 V
●
          文件：180.59 Kbytes 頁(yè)數(shù)：6 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF130
          N-CHANNEL POWER MOSFETS
          
FEATURES
● Low RDS(on)
● Improved inductive ruggedness
● Fast switching times
● Rugged polysilicon gate cell structure
● Low input capacitance
● Extended safe operating area
● Improved high temperature reliability
● TO-3 package (Standard)
          文件：211.72 Kbytes 頁(yè)數(shù)：5 Pages
          SAMSUNG
          三星
          

          IRF130
          14A, 100V, 0.160 Ohm, N-Channel Power MOSFET
          
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs ar
          文件：56.56 Kbytes 頁(yè)數(shù)：7 Pages
          INTERSIL
          

          IRF130
          TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
          
Product Summary

The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior 
          文件：147.29 Kbytes 頁(yè)數(shù)：7 Pages
          IRF
          

          IRF130
          High Power,High Speed Applications
          
DESCRIPTION
? Drain Current ID=14A@ TC=25℃
? Drain Source Voltage-
   : VDSS= 100V(Min)
? Static Drain-Source On-Resistance
   : RDS(on) =0.18Ω(Max)
? High Power,High Speed Applications
APPLICATIONS
? Switching power supplies
? UPS
? Motor controls
? High energy pulse circuits.
          文件：48.16 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          IRF130
          REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
          
Features:
? Repetitive Avalanche Ratings
? Dynamic dv/dt Rating
? HermeticallySealed
? Simple Drive Requirements
? Ease ofParalleling
          文件：106.79 Kbytes 頁(yè)數(shù)：3 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          IRF130-133
          N-Channel Power MOSFETs, 20 A, 60-100 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VGS Rated at ±20 V
●
          文件：180.59 Kbytes 頁(yè)數(shù)：6 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF1302
          Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??
          
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 
          文件：523.539 Kbytes 頁(yè)數(shù)：9 Pages
          IRF
          

          IRF1302L
          Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??
          
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 
          文件：229.09 Kbytes 頁(yè)數(shù)：11 Pages
          IRF
          

          IRF1302S
          Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??
          
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 
          文件：229.09 Kbytes 頁(yè)數(shù)：11 Pages
          IRF
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • OPN：
            IRF100B201
          • Qualification：
            Non-Automotive
          • Package name：
            TO220
          • VDS max：
            100 V
          • RDS (on) @10V max：
            4.2 m?
          • ID  @25°C max：
            192 A
          • QG typ @10V：
            170 nC
          • Polarity：
            N
          • VGS(th) min：
            2 V
          • VGS(th) max：
            4 V
          • VGS(th)：
            3 V
          • Technology：
            IR MOSFET?
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



          IR
          		

          22+
          		

          263
          		

          6000
          		

          終端可免費(fèi)供樣,支持BOM配單
          		
詢(xún)價(jià)
          

          



          IR
          		

          23+
          		

          263
          		

          8000
          		

          專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
          		
詢(xún)價(jià)
          

          



          IR
          		

          23+
          		

          263
          		

          7000
          		

          		
詢(xún)價(jià)
          

          



          IR-韓國(guó)產(chǎn)
          		

          25+
          		

          TO-220
          		

          16402
          		

          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          		
詢(xún)價(jià)
          

          



          INFINEON
          		

          21+
          		

          標(biāo)準(zhǔn)封裝
          		

          60
          		

          保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號(hào)
          		
詢(xún)價(jià)
          

          



          IR
          		

          2022+
          		

          		

          45
          		

          只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
          		
詢(xún)價(jià)
          

          



          Infineon(英飛凌)
          		

          23+
          		

          標(biāo)準(zhǔn)封裝
          		

          7000
          		

          原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品
          		
詢(xún)價(jià)
          

          



          INFINEON/英飛凌
          		

          22+
          		

          SOP-6
          		

          100000
          		

          代理渠道/只做原裝/可含稅
          		
詢(xún)價(jià)
          

          



          IOR
          		

          25+
          		

          SOP8
          		

          3000
          		

          強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢(xún)!
          		
詢(xún)價(jià)
          

          



          SAMSUNG
          		

          25+
          		

          TO-220
          		

          2987
          		

          只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!
          		
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