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首頁(yè) >IRF>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRF1010EZ	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1010EZ	文件：296.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：296.01 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
IRF1010EZL	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1010EZPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1010EZPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1010EZS	文件：287.5 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
IRF1010EZS	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1010EZSPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF

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技術(shù)參數(shù)

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 m?
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF	IR	22+	263	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF	IR	23+	263	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF	IR	23+	263	7000		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRFB4410PBF	IR		TO	1100	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRF7101		20+		36800	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市佳鑫美電子科技有限公司	IRFZ24	SAMSUNG	25+	TO-220	2987	只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	IRFR230BTF_FP001	Fairchi	24+	DXPAK	6000	進(jìn)口原裝正品假一賠十,貨期7-10天	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	IRFP3108	IR	25+	TO-3P	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
上海鑫科潤(rùn)電子科技有限公司	IRF7326D2TR	IOR	05+	SOP8	860	原裝現(xiàn)貨海量庫(kù)存歡迎咨詢	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IRF100B202	英飛凌	23+	TO-220	30000	原裝正品,假一罰十	詢價(jià)

更多IRF供應(yīng)商更新時(shí)間2026-1-18 14:00:00

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