| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching 文件：57.97 Kbytes 頁(yè)數(shù)：7 Pages | INTERSIL | INTERSIL | ||
HIGH VOLTAGE POWER MOSFET DIE FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS? process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver 文件：44.9 Kbytes 頁(yè)數(shù)：1 Pages | IXYS 艾賽斯 | IXYS | ||
N-Channel Power MOSFETs, 40 A, 60 V/100 V N-Channel Power MOSFET 40A, 60 V/100 V 文件：125.37 Kbytes 頁(yè)數(shù)：4 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, 文件：552.76 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件：659.63 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件：253.75 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fas 文件：164.88 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件：659.63 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件：253.75 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
絲印：M115；Package：MG-WDSON-5；MOSFET OptiMOS?5, 150 V Features Lead free, ultra thin double sided cooling package Excellent gate charge x Ros(on) product (FOM) Very low on -resistance Ros(on) N-channel normal level 100 avalanche tested 文件：1.74566 Mbytes 頁(yè)數(shù)：14 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
263 |
7000 |
詢價(jià) | |||
0 |
詢價(jià) | ||||||
Fairchi |
24+ |
DXPAK |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價(jià) | ||
IRF |
24+ |
SOP-8P |
400 |
現(xiàn)貨 |
詢價(jià) | ||
IRF |
4000一盤 |
13+ |
0 |
SOP8 |
詢價(jià) | ||
IR |
24+ |
TO-220F |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
IOR |
25+ |
SOP8 |
3000 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
5002 |
24+ |
SOP |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) |
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