| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im 文件:224.58 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching a 文件:263.11 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description This HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features 文件:256.45 Kbytes 頁數(shù):12 Pages | IRF | IRF | ||
N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V 文件:165.53 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-CHANNEL POWER MOSFETS FEATURES ? Low RDs 文件:209.79 Kbytes 頁數(shù):5 Pages | SAMSUNG 三星 | SAMSUNG | ||
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:68.86 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:135.19 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V 文件:165.53 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-CHANNEL POWER MOSFETS FEATURES ? Low RDs 文件:209.79 Kbytes 頁數(shù):5 Pages | SAMSUNG 三星 | SAMSUNG | ||
Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:135.19 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI |
技術(shù)參數(shù)
- OPN:
IRF100B201
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
100 V
- RDS (on) @10V max:
4.2 m?
- ID @25°C max:
192 A
- QG typ @10V:
170 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
263 |
7000 |
詢價(jià) | |||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
20+ |
SOP8 |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
22+ |
TO-252 |
88490 |
絕對(duì)真實(shí)庫存 原裝正品 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
55000 |
原裝正品現(xiàn)貨,誠信經(jīng)營。假一罰十 |
詢價(jià) | ||
Infineon(英飛凌) |
2447 |
PQFN3.3X3.38L |
315000 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
IR |
09+ |
TO-220 |
16 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IR |
兩年內(nèi) |
NA |
658 |
實(shí)單價(jià)格可談 |
詢價(jià) |
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