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          首頁 >IRF>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF2204S

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

          文件:224.58 Kbytes 頁數(shù):11 Pages

          IRF

          IRF2204S

          絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching a

          文件:263.11 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF2204SPBF

          HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

          Description This HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

          文件:256.45 Kbytes 頁數(shù):12 Pages

          IRF

          IRF221

          N-Channel Power MOSFETs, 7A, 150-200V

          N-Channel Power MOSFETs 7A 150-200V

          文件:165.53 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF221

          N-CHANNEL POWER MOSFETS

          FEATURES ? Low RDs

          文件:209.79 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF221

          4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

          Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

          文件:68.86 Kbytes 頁數(shù):7 Pages

          INTERSIL

          IRF221

          Nanosecond Switching Speeds

          Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

          文件:135.19 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF222

          N-Channel Power MOSFETs, 7A, 150-200V

          N-Channel Power MOSFETs 7A 150-200V

          文件:165.53 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF222

          N-CHANNEL POWER MOSFETS

          FEATURES ? Low RDs

          文件:209.79 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF222

          Nanosecond Switching Speeds

          Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

          文件:135.19 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          技術(shù)參數(shù)

          • OPN:

            IRF100B201

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            100 V

          • RDS (on) @10V max:

            4.2 m?

          • ID @25°C max:

            192 A

          • QG typ @10V:

            170 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          IR
          22+
          263
          6000
          終端可免費(fèi)供樣,支持BOM配單
          詢價(jià)
          IR
          23+
          263
          8000
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          IR
          23+
          263
          7000
          詢價(jià)
          IR
          17+
          DIP-4
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          IR
          20+
          SOP8
          11520
          特價(jià)全新原裝公司現(xiàn)貨
          詢價(jià)
          INFINEON
          22+
          TO-252
          88490
          絕對(duì)真實(shí)庫存 原裝正品
          詢價(jià)
          INFINEON/英飛凌
          2021+
          TO-220
          55000
          原裝正品現(xiàn)貨,誠信經(jīng)營。假一罰十
          詢價(jià)
          Infineon(英飛凌)
          2447
          PQFN3.3X3.38L
          315000
          一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
          詢價(jià)
          IR
          09+
          TO-220
          16
          一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價(jià)
          IR
          兩年內(nèi)
          NA
          658
          實(shí)單價(jià)格可談
          詢價(jià)
          更多IRF供應(yīng)商 更新時(shí)間2026-1-21 14:00:00
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