N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：210.79 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

HEXFET POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件：178.39 Kbytes 頁數(shù)：6 Pages

IRF

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

文件：125.37 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導體

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：210.79 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS? process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 頁數(shù)：1 Pages

IXYS

艾賽斯

Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：234.11 Kbytes 頁數(shù)：9 Pages

IRF

N-Channel MOSFET Transistor

? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤7.5m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.78 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：160.22 Kbytes 頁數(shù)：9 Pages

IRF

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??

Description Specifically designed for Automotive applications, this HEXFET? power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET?

文件：102.09 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A)

HEXFET? Power MOSFET

文件：171.47 Kbytes 頁數(shù)：6 Pages

IRF