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          IRF220
          N-Channel Power MOSFETs, 7A, 150-200V
          
N-Channel Power MOSFETs 7A 150-200V 
          文件：165.53 Kbytes 頁(yè)數(shù)：5 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF220
          N-CHANNEL POWER MOSFETS
          
FEATURES
? Low RDs
          文件：209.79 Kbytes 頁(yè)數(shù)：5 Pages
          SAMSUNG
          三星
          

          IRF220
          4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
          
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica
          文件：68.86 Kbytes 頁(yè)數(shù)：7 Pages
          INTERSIL
          

          IRF220
          High Speed Applications
          
DESCRIPTION
? Drain Current ID=5A@ TC=25℃
? Drain Source Voltage- : VDSS= 200V(Min)
? Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max)
? High Speed Applications 
APPLICATIONS
? Switching power supplies
          文件：48.23 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          IRF220
          Nanosecond Switching Speeds
          
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica
          文件：135.19 Kbytes 頁(yè)數(shù)：3 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          IRF220-223
          N-Channel Power MOSFETs, 7A, 150-200V
          
N-Channel Power MOSFETs 7A 150-200V 
          文件：165.53 Kbytes 頁(yè)數(shù)：5 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF2204
          N-Channel MOSFET Transistor
          
? DESCRITION
? reliable device for use in a wide variety of applications
? FEATURES
? Static drain-source on-resistance: RDS(on) ≤3.6m?
? Enhancement mode
? Fast Switching Speed
? 100 avalanche tested
? Minimum Lot-to-Lot variations for robust device performance and reliable operation
          文件：338.51 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          IRF2204
          AUTOMOTIVE MOSFET
          
Description

Specifically designed for Automotive applications, this HEXFET?Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp
          文件：141.6 Kbytes 頁(yè)數(shù)：9 Pages
          IRF
          

          IRF2204L
          AUTOMOTIVE MOSFET
          
Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im
          文件：224.58 Kbytes 頁(yè)數(shù)：11 Pages
          IRF
          

          IRF2204LPBF
          HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )
          
Description

This HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features 
          文件：256.45 Kbytes 頁(yè)數(shù)：12 Pages
          IRF
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • OPN：
            IRF100B201
          • Qualification：
            Non-Automotive
          • Package name：
            TO220
          • VDS max：
            100 V
          • RDS (on) @10V max：
            4.2 m?
          • ID  @25°C max：
            192 A
          • QG typ @10V：
            170 nC
          • Polarity：
            N
          • VGS(th) min：
            2 V
          • VGS(th) max：
            4 V
          • VGS(th)：
            3 V
          • Technology：
            IR MOSFET?
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



          IR
          		

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          263
          		

          6000
          		

          終端可免費(fèi)供樣,支持BOM配單
          		
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          ?
          		

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          1516+
          		

          TO-220
          		

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          IR
          		

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          SOP-8
          		

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