| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF1503 | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, 文件:552.76 Kbytes 頁(yè)數(shù):9 Pages | IRF | IRF | |
IRF1503 | N-Channel MOSFET Transistor 文件:338.67 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | |
IRF1503 | 采用 TO-220AB 封裝的 30V 單 N 通道 HEXFET 功率 MOSFET \n優(yōu)勢(shì):\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開(kāi)關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度; | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件:659.63 Kbytes 頁(yè)數(shù):11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件:253.75 Kbytes 頁(yè)數(shù):11 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fas 文件:164.88 Kbytes 頁(yè)數(shù):9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件:659.63 Kbytes 頁(yè)數(shù):11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件:253.75 Kbytes 頁(yè)數(shù):11 Pages | IRF | IRF | ||
Advanced Process Technology 文件:336.52 Kbytes 頁(yè)數(shù):11 Pages | IRF | IRF | ||
Advanced Process Technology 文件:273.78 Kbytes 頁(yè)數(shù):9 Pages | IRF | IRF |
技術(shù)參數(shù)
- Package?:
TO-220
- VDS?max:
30.0V
- RDS (on)(@10V)?max:
3.3m?
- RDS (on)?max:
3.3m?
- Polarity?:
N
- ID (@ TC=100°C)?max:
170.0A
- ID ?max:
170.0A
- ID (@ TC=25°C)?max:
240.0A
- Ptot?max:
330.0W
- QG?:
130.0nC?
- Mounting?:
THT
- RthJC?max:
0.45K/W
- Qgd?:
41.0nC?
- Tj?max:
175.0°C
- VGS?max:
20.0V
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
25+ |
200 |
公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||||
IR |
06+ |
TO-220 |
15000 |
原裝庫(kù)存 |
詢價(jià) | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
TO-220AB |
8866 |
詢價(jià) | |||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
20+ |
TO-220AB |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
IR |
23+ |
TO-220AB |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
2447 |
TO-220 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
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- SI7921DN
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- SI7938DP
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- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
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