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首頁(yè) >IRF>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRF1407LPBF	文件：258.07 Kbytes Page：12 Pages	HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A ) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：258.07 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1407PBF	文件：167.92 Kbytes Page：10 Pages	HEXFET? Power MOSFET Description This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti 文件：167.92 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRF1407S	文件：159.79 Kbytes Page：11 Pages	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A?? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：159.79 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRF1407SPBF	文件：258.07 Kbytes Page：12 Pages	HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A ) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：258.07 Kbytes 頁(yè)數(shù)：12 Pages	IRF	IRF
IRF1407SPBF	文件：578.95 Kbytes Page：12 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：578.95 Kbytes 頁(yè)數(shù)：12 Pages	INFINEON 英飛凌	INFINEON
IRF1407STRLPbF	文件：578.95 Kbytes Page：12 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：578.95 Kbytes 頁(yè)數(shù)：12 Pages	INFINEON 英飛凌	INFINEON
IRF141	文件：211.32 Kbytes Page：5 Pages	N-CHANNEL POWER MOSFETS N-CHANNEL POWER MOSFETS 文件：211.32 Kbytes 頁(yè)數(shù)：5 Pages	SAMSUNG 三星	SAMSUNG
IRF141	文件：103.6 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 27 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件：103.6 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF142	文件：103.6 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 27 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件：103.6 Kbytes 頁(yè)數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF142	文件：211.32 Kbytes Page：5 Pages	N-CHANNEL POWER MOSFETS N-CHANNEL POWER MOSFETS 文件：211.32 Kbytes 頁(yè)數(shù)：5 Pages	SAMSUNG 三星	SAMSUNG

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技術(shù)參數(shù)

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 m?
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF	IR	22+	263	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF	IR	23+	263	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF	IR	23+	263	7000		詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRFD123	IR	17+	DIP-4	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市賽芯源科技有限公司	IRF3207PBF	INFINEON/英飛凌	2021+	TO-220	55000	原裝正品現(xiàn)貨,誠(chéng)信經(jīng)營(yíng)。假一罰十	詢價(jià)
深圳市斌騰達(dá)科技有限公司	IRFR6215TRLPBF	INFINEON	22+	TO-252	88490	絕對(duì)真實(shí)庫(kù)存原裝正品	詢價(jià)
深圳市金芯陽(yáng)科技有限公司	IRFR3710Z	IR	24+	D-PAK	4000		詢價(jià)
深圳良洲科技有限公司	IRF3710STRRPBF	IR	兩年內(nèi)	NA	658	實(shí)單價(jià)格可談	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IRFT7103RPBF	IR	23+	SOP-8	4600	一級(jí)代理原廠VIP渠道,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、	詢價(jià)
深圳市樂(lè)峰達(dá)科技有限公司	IRFH6200TRPBF	國(guó)際整流器	25+	PQFN-8	16850	全新原裝正品、可開(kāi)增票、可溯源、一站式配單	詢價(jià)

更多IRF供應(yīng)商更新時(shí)間2026-1-21 14:00:00

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