| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 頁(yè)數(shù)：12 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 頁(yè)數(shù)：12 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Electric Power Steering (EPS) Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件：3.36263 Mbytes 頁(yè)數(shù)：9 Pages | KERSEMI | KERSEMI | ||
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe 文件：116.43 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢(xún)價(jià) | ||
IR |
23+ |
263 |
8000 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
23+ |
263 |
7000 |
詢(xún)價(jià) | |||
20+ |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢(xún)價(jià) | ||
Fairchi |
24+ |
DXPAK |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢(xún)價(jià) | ||
0 |
詢(xún)價(jià) | ||||||
英飛凌 |
23+ |
TO-220 |
30000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
IR |
1745+ |
TO-263 |
1690 |
全新原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
INF |
22+ |
30000 |
原裝現(xiàn)貨,假一罰十,可含稅原進(jìn)項(xiàng) |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
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- TD62308BP1G
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- TL074
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相關(guān)庫(kù)存
更多- NE5532
- NE5532
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- NE5533
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- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
