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首頁 >IRF>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRF1405ZL-7PPBF	文件：696.52 Kbytes Page：12 Pages	HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A ) VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：696.52 Kbytes 頁數(shù)：12 Pages	IRF	IRF
IRF1405ZLPBF	文件：812.24 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 頁數(shù)：13 Pages	IRF	IRF
IRF1405ZPBF	文件：812.24 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 頁數(shù)：13 Pages	IRF	IRF
IRF1405ZS	文件：291.64 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 頁數(shù)：12 Pages	IRF	IRF
IRF1405ZS-7P	文件：688.27 Kbytes Page：11 Pages	AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：688.27 Kbytes 頁數(shù)：11 Pages	IRF	IRF
IRF1405ZS-7PPBF	文件：696.52 Kbytes Page：12 Pages	HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A ) VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：696.52 Kbytes 頁數(shù)：12 Pages	IRF	IRF
IRF1405ZSPBF	文件：812.24 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 頁數(shù)：13 Pages	IRF	IRF
IRF1407	文件：127.66 Kbytes Page：9 Pages	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件：127.66 Kbytes 頁數(shù)：9 Pages	IRF	IRF
IRF1407L	文件：159.79 Kbytes Page：11 Pages	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A?? Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：159.79 Kbytes 頁數(shù)：11 Pages	IRF	IRF
IRF1407LPbF	文件：578.95 Kbytes Page：12 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：578.95 Kbytes 頁數(shù)：12 Pages	INFINEON 英飛凌	INFINEON

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技術(shù)參數(shù)

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 m?
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF	IR	22+	263	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF	IR	23+	263	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF	IR	23+	263	7000		詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRFD123	IR	17+	DIP-4	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市卓越微芯電子有限公司	IRFB4110PBF	IR-韓國(guó)產(chǎn)	25+	TO-220	16402	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市斌騰達(dá)科技有限公司	IRFR6215TRLPBF	INFINEON	22+	TO-252	88490	絕對(duì)真實(shí)庫存原裝正品	詢價(jià)
深圳市賽芯源科技有限公司	IRF3207PBF	INFINEON/英飛凌	2021+	TO-220	55000	原裝正品現(xiàn)貨,誠(chéng)信經(jīng)營(yíng)。假一罰十	詢價(jià)
深圳市湘達(dá)電子科技有限公司	IRFM240其他被動(dòng)元件	IR	2022+		45	只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。	詢價(jià)
深圳良洲科技有限公司	IRF3710STRRPBF	IR	兩年內(nèi)	NA	658	實(shí)單價(jià)格可談	詢價(jià)
深圳科宇泰科技有限公司	IRFH5302DTRPBF	INFINEON	21+	標(biāo)準(zhǔn)封裝	60	保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號(hào)	詢價(jià)

更多IRF供應(yīng)商更新時(shí)間2026-1-19 14:03:00

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