N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

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SAMSUNG

三星

40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS? process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

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IXYS

艾賽斯

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

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IRF

High Power,High Speed Applications

DESCRIPTION ? Drain Current ID=40A@ TC=25℃ ? Drain Source Voltage- : VDSS= 100V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) ? High Power,High Speed Applications APPLICATIONS ? Switching power supplies ? UPS ? Motor controls ? High energy pulse circuits.

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ISC

無錫固電

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching sp

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NELLSEMI

尼爾半導(dǎo)體

N-CHANNEL POWER MOSFET

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SEME-LAB

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

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