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          首頁 >IRF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF150P220

          絲?。?a target="_blank" title="Marking" href="/irf150p220/marking.html">IRF150P220;Package:PG-TO247-3;StrongIRFETa

          Features ? Very low RDS(on) ? Excellent gate charge x RDS(on) (FOM) ? Optimized Qrr ? 175°C operating temperature ? Product validation according to JEDEC standard ? Optimized for broadest availability from distribution partners

          文件:1.14547 Mbytes 頁數(shù):11 Pages

          INFINEON

          英飛凌

          IRF150P220AKMA1

          StrongIRFETa

          Features ? Very low RDS(on) ? Excellent gate charge x RDS(on) (FOM) ? Optimized Qrr ? 175°C operating temperature ? Product validation according to JEDEC standard ? Optimized for broadest availability from distribution partners

          文件:1.14547 Mbytes 頁數(shù):11 Pages

          INFINEON

          英飛凌

          IRF151

          DUAL MOSFET DRIVER

          ? Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds ? Output Supply Voltage Range up to 24 V ? Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and vol

          文件:656.7 Kbytes 頁數(shù):21 Pages

          TI

          德州儀器

          IRF151

          HIGH VOLTAGE POWER MOSFET DIE

          FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS? process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

          文件:44.9 Kbytes 頁數(shù):1 Pages

          IXYS

          艾賽斯

          IRF151

          N-Channel Power MOSFETs, 40 A, 60 V/100 V

          N-Channel Power MOSFET 40A, 60 V/100 V

          文件:125.37 Kbytes 頁數(shù):4 Pages

          FAIRCHILD

          仙童半導體

          IRF151

          High Power,High Speed Applications

          DESCRIPTION ? Drain Current ID=40A@ TC=25℃ ? Drain Source Voltage- : VDSS= 60V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) ? High Power,High Speed Applications APPLICATIONS ? Switching power supplies ? UPS ? Motor controls ? High energy pulse circuits.

          文件:48.19 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF151

          N-CHANNEL POWER MOSFETS

          FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

          文件:210.79 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF152

          N-CHANNEL POWER MOSFETS

          FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

          文件:136.47 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          IRF152

          N-Channel Power MOSFETs, 40 A, 60 V/100 V

          N-Channel Power MOSFET 40A, 60 V/100 V

          文件:125.37 Kbytes 頁數(shù):4 Pages

          FAIRCHILD

          仙童半導體

          IRF152

          HIGH VOLTAGE POWER MOSFET DIE

          FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS? process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

          文件:44.9 Kbytes 頁數(shù):1 Pages

          IXYS

          艾賽斯

          技術(shù)參數(shù)

          • OPN:

            IRF100B201

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            100 V

          • RDS (on) @10V max:

            4.2 m?

          • ID @25°C max:

            192 A

          • QG typ @10V:

            170 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          22+
          263
          6000
          終端可免費供樣,支持BOM配單
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          23+
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          專注配單,只做原裝進口現(xiàn)貨
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          INFINEON
          21+
          標準封裝
          60
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          IR
          20+
          SOP8
          11520
          特價全新原裝公司現(xiàn)貨
          詢價
          INFINEON/英飛凌
          2021+
          TO-220
          55000
          原裝正品現(xiàn)貨,誠信經(jīng)營。假一罰十
          詢價
          Infineon(英飛凌)
          2447
          PQFN3.3X3.38L
          315000
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          Infineon(英飛凌)
          23+
          標準封裝
          7000
          原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品
          詢價
          IR
          24+
          D-PAK
          4000
          詢價
          IR
          09+
          TO-220
          16
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          更多IRF供應(yīng)商 更新時間2026-1-19 14:03:00
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