| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：154.79 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：3.92361 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：240.27 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 5.3m? ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOS 文件：207.62 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：154.79 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：3.92361 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：240.27 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9m? ID = 120A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：688.27 Kbytes 頁數(shù)：11 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
263 |
7000 |
詢價(jià) | |||
IR-韓國產(chǎn) |
25+ |
TO-220 |
16402 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
1725+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
IR |
2022+ |
45 |
只做原裝,價(jià)格優(yōu)惠,長期供貨。 |
詢價(jià) | |||
INFINEON/英飛凌 |
2021+ |
TO-220 |
55000 |
原裝正品現(xiàn)貨,誠信經(jīng)營。假一罰十 |
詢價(jià) | ||
INFINEON |
22+ |
TO-252 |
88490 |
絕對真實(shí)庫存 原裝正品 |
詢價(jià) | ||
IR |
26+ |
SOP-8 |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢價(jià) |
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