| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp 文件：306.92 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature 文件：3.89112 Mbytes 頁(yè)數(shù)：10 Pages | KERSEMI | KERSEMI | ||
HEXFET? Power MOSFET Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat 文件：279.7 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology Description Seventh Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：3.45272 Mbytes 頁(yè)數(shù)：9 Pages | KERSEMI | KERSEMI | ||
HEXFET? Power MOSFET Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k 文件：201.83 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp 文件：306.92 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam 文件：1.19651 Mbytes 頁(yè)數(shù)：10 Pages | KERSEMI | KERSEMI | ||
HEXFET? Power MOSFET Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature 文件：3.89112 Mbytes 頁(yè)數(shù)：10 Pages | KERSEMI | KERSEMI |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
263 |
7000 |
詢價(jià) | |||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢價(jià) | ||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
25+ |
TO263 |
783 |
旗艦店 |
詢價(jià) | ||
VishayDale |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
23+ |
TO263 |
10089 |
優(yōu)勢(shì) /原裝現(xiàn)貨長(zhǎng)期供應(yīng)現(xiàn)貨支持 |
詢價(jià) | ||
原廠 |
2023+ |
模塊 |
600 |
專營(yíng)模塊,繼電器,公司原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
22+ |
SOP-6 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
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- MAX2321
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- SI7964DP
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相關(guān)庫(kù)存
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- SI7913DN
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- SI7946DP
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- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
