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首頁 >IRF>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IRF140	文件：211.32 Kbytes Page：5 Pages	N-CHANNEL POWER MOSFETS N-CHANNEL POWER MOSFETS 文件：211.32 Kbytes 頁數(shù)：5 Pages	SAMSUNG 三星	SAMSUNG
IRF140	文件：55.94 Kbytes Page：7 Pages	28A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching 文件：55.94 Kbytes 頁數(shù)：7 Pages	INTERSIL	INTERSIL
IRF140	文件：144.37 Kbytes Page：7 Pages	TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A) The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio 文件：144.37 Kbytes 頁數(shù)：7 Pages	IRF	IRF
IRF140	文件：48.3 Kbytes Page：2 Pages	High Power,High Speed Applications DESCRIPTION ? Drain Current ID=27A@ TC=25℃ ? Drain Source Voltage- : VDSS= 100V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ? High Power,High Speed Applications APPLICATIONS ? Switching power supplies 文件：48.3 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
IRF140	文件：103.6 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 27 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件：103.6 Kbytes 頁數(shù)：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
IRF140-143	文件：146.34 Kbytes Page：5 Pages	N-Channel Power MOSFETs, 27 A, 60-100V 文件：146.34 Kbytes 頁數(shù)：5 Pages	FAIRCHILD 仙童半導(dǎo)體	FAIRCHILD
IRF1404	文件：2.99281 Mbytes Page：8 Pages	Advanced Process Technology Ultra Low On-Resistance Description Seventh Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：2.99281 Mbytes 頁數(shù)：8 Pages	KERSEMI	KERSEMI
IRF1404	文件：107.46 Kbytes Page：8 Pages	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：107.46 Kbytes 頁數(shù)：8 Pages	IRF	IRF
IRF1404	文件：139.55 Kbytes Page：2 Pages	isc N-Channel Mosfet Transistor Description Seventh Generation HEXFET ? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k 文件：139.55 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
IRF1404L	文件：1.19651 Mbytes Page：10 Pages	Ultra Low On-Resistance Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam 文件：1.19651 Mbytes 頁數(shù)：10 Pages	KERSEMI	KERSEMI

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技術(shù)參數(shù)

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 m?
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF	IR	22+	263	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF	IR	23+	263	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF	IR	23+	263	7000		詢價(jià)
深圳市卓越微芯電子有限公司	IRFB4110PBF	IR-韓國產(chǎn)	25+	TO-220	16402	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市湘達(dá)電子科技有限公司	IRFM240其他被動(dòng)元件	IR	2022+		45	只做原裝,價(jià)格優(yōu)惠,長期供貨。	詢價(jià)
深圳科宇泰科技有限公司	IRFH5302DTRPBF	INFINEON	21+	標(biāo)準(zhǔn)封裝	60	保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號(hào)	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	IRF5802TRPBF	INFINEON/英飛凌	22+	SOP-6	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRFB4410PBF	IR		TO	1100	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRFD123	IR	17+	DIP-4	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市福安甌科技有限公司	IRF7103TRPBF	IOR	25+	SOP8	3000	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)

更多IRF供應(yīng)商更新時(shí)間2026-1-19 14:03:00

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