| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET? Power MOSFET Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat 文件：279.7 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology Description Seventh Generation HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat 文件：279.7 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
N-Channel MOSFET ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) 文件：2.53346 Mbytes 頁(yè)數(shù)：6 Pages | KEXIN 科信電子 | KEXIN | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 頁(yè)數(shù)：12 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 頁(yè)數(shù)：12 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 頁(yè)數(shù)：12 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
263 |
7000 |
詢價(jià) | |||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
20+ |
SOP8 |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
22+ |
TO-252 |
88490 |
絕對(duì)真實(shí)庫(kù)存 原裝正品 |
詢價(jià) | ||
INFINEON |
21+ |
標(biāo)準(zhǔn)封裝 |
60 |
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號(hào) |
詢價(jià) | ||
Infineon(英飛凌) |
2447 |
PQFN3.3X3.38L |
315000 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
2021+ |
TO-220 |
55000 |
原裝正品現(xiàn)貨,誠(chéng)信經(jīng)營(yíng)。假一罰十 |
詢價(jià) | ||
IR |
兩年內(nèi) |
NA |
658 |
實(shí)單價(jià)格可談 |
詢價(jià) |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
