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          首頁 >IRF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF1324

          N-Channel MOSFET Transistor

          ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤1.5m? ? Enhancement mode: ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:338.87 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF1324LPBF

          HEXFET Power MOSFET

          Benefits ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability ? Lead-Free Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Pow

          文件:526.79 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1324PBF

          HEXFETPower MOSFET

          Benefits ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability ?Lead-Free Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Powe

          文件:457.13 Kbytes 頁數(shù):8 Pages

          IRF

          IRF1324S-7PPBF

          High Efficiency Synchronous Rectification in SMPS

          Benefits ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability ? Lead-Free Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Pow

          文件:711.87 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          IRF1324S-7PPBF

          HEXFET Power MOSFET

          Benefits ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability ? Lead-Free Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Pow

          文件:280.06 Kbytes 頁數(shù):9 Pages

          IRF

          IRF1324SPBF

          HEXFET Power MOSFET

          Benefits ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability ? Lead-Free Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Pow

          文件:526.79 Kbytes 頁數(shù):10 Pages

          IRF

          IRF1324STRL-7PP

          High Efficiency Synchronous Rectification in SMPS

          Benefits ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Enhanced body diode dV/dt and dI/dt Capability ? Lead-Free Applications ? High Efficiency Synchronous Rectification in SMPS ? Uninterruptible Power Supply ? High Speed Pow

          文件:266.26 Kbytes 頁數(shù):10 Pages

          IRF

          IRF133

          N-Channel Power MOSFETs, 20 A, 60-100 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

          文件:180.59 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF133

          N-CHANNEL POWER MOSFETS

          FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

          文件:211.72 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF140

          N-Channel Power MOSFETs, 27 A, 60-100V

          文件:146.34 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          技術(shù)參數(shù)

          • OPN:

            IRF100B201

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            100 V

          • RDS (on) @10V max:

            4.2 m?

          • ID @25°C max:

            192 A

          • QG typ @10V:

            170 nC

          • Polarity:

            N

          • VGS(th) min:

            2 V

          • VGS(th) max:

            4 V

          • VGS(th):

            3 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          22+
          263
          6000
          終端可免費供樣,支持BOM配單
          詢價
          IR
          23+
          263
          8000
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價
          IR
          23+
          263
          7000
          詢價
          IR
          25+
          TO-3P
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          SAMSUNG
          25+
          TO-220
          2987
          只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
          詢價
          20+
          36800
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          英飛凌
          23+
          TO-220
          30000
          原裝正品,假一罰十
          詢價
          IR
          TO
          1100
          正品原裝--自家現(xiàn)貨-實單可談
          詢價
          IR
          1745+
          TO-263
          1690
          全新原裝現(xiàn)貨
          詢價
          VishayDale
          5
          全新原裝 貨期兩周
          詢價
          更多IRF供應(yīng)商 更新時間2026-1-19 14:03:00
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