N-Channel Shielded Gate PowerTrench? MOSFET 100V, 124A, 4.2mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. ?Shielded Gate MOSFET Technology\n? Optimized RDS* Qg Ratio\n? 50% lower Qrr than other MOSFET suppliers\n? Reduces Switching Spike (overshoot)\n?Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A\n?Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A\n?Lowers switching noise/EMI\n?MSL1 robust package design\;

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement MOSFET

Application | ? Load switch | ? High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate ? DC/DC Power Supplies |

文件：1.92398 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH

文件：482.04 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

Power 56

VISHAYVishay Siliconix

威世威世科技公司

上傳：深圳市壹芯創(chuàng)科技有限公司

Power-56-8

ON

上傳：深圳市壹芯創(chuàng)科技有限公司