N 溝道，Power Trench? MOSFET，150V，30A，25mΩ

此N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低導(dǎo)通電阻并保持卓越開關(guān)性能而定制的。 ? Shielded Gate MOSFET Technology\n? Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A\n? Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A\n? Advanced package and silicon combinatory for low rDS(on) and high efficiency\n? MSL1 robust package design\n? 100% UIL tested\n? RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 150 V, 20 A, 25 m廓

文件：272.23 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

THE ADVANCED 64-BIT WINDOWS-95 AND DIRECTDRAW ACCELERATOR

文件：134.03 Kbytes 頁數(shù)：25 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Spacial CRN plain door w/o mount.plate. H800xW600xD250 IP66 IK10 RAL7035..

文件：101.69 Kbytes 頁數(shù)：2 Pages

SCHNEIDER

施耐德

Spacial CRN plain door with mount.plate. H800xW600xD250 IP66 IK10 RAL7035..

文件：101.72 Kbytes 頁數(shù)：2 Pages

SCHNEIDER

施耐德