N-Channel Dual CoolTM Power Trench? MOSFET 60 V, 108 A, 2.3 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：280.09 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數(shù)：2 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，雙 CoolTM 56 Power Trench? MOSFET，60V，108A，2.3mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench?工藝生產(chǎn)。 先進(jìn)的硅技術(shù)和 Dual Cool? 封裝技術(shù)完美融合，可在提供最小 rDS(on) 的同時通過極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。 ? Dual Cool? Top Side Cooling PQFN package\n? Max rDS(on) = 2.3 mΩ at VGS(on) = 10 V, ID = 29 A\n? Max rDS(on) = 3.3 mΩ at VGS(on) = 8 V, ID = 24 A\n? High performance technology for extremely low rDS(on)\n? 100% UIL Tested\n? RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 60 V, 80 A, 2.5 m廓

文件：283.61 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體