N 溝道，PowerTrench? MOSFET，60V，22A，8.2mΩ

該N溝道MOSFET專為使用同步或傳統(tǒng)開關PWM控制器來改進總體效率和在最大程度上減少DC/DC轉換器的開關結點振鈴而設計。已經(jīng)針對低柵極電荷、低rDS(on)、快速開關速度和軟體二極管反向恢復性能進行了優(yōu)化。 ?VGS = 2 V且ID = 13.5 A時，最大rDS(on) = 8.2 m? \n?VGS = 4.5 V且ID = 11.5 A時，最大rDS(on) = 11.7 m? \n?先進的封裝和硅技術完美融合，實現(xiàn)了低rDS(on)和高效率\n?MSL1耐用封裝設計\n?100%經(jīng)過UIL測試\n?符合RoHS標準;

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安森美半導體

N-Channel PowerTrench? MOSFET 60 V, 22 A, 8.2 m廓

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N-Channel Dual CoolTM PowerTrench? MOSFET 60 V, 40 A, 6.3 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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仙童半導體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數(shù)：2 Pages

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仙童半導體

N-Channel Power Trench? MOSFET 60 V, 22 A, 7.9 m廓

文件：258.81 Kbytes 頁數(shù)：7 Pages

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