DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數(shù)：2 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Dual CoolTM Power Trench? MOSFET 80 V, 60 A, 3.1 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：285.52 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，雙 CoolTM 56 PowerTrench? MOSFET，80V，110A，3.1mΩ

此 N 溝道 MOSFET 采用飛兆先進(jìn)的 Power Trench? 工藝生產(chǎn)。先進(jìn)的硅技術(shù)和 Dual Cool? 封裝技術(shù)完美融合，可在提供最小 rDS(on)的同時通過極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。 ?Dual Cool? 頂側(cè)冷卻 PQFN 封裝\n?最大 rDS(on) = 3.1 mΩ（VGS = 10 V、ID = 24 A）\n?最大 rDS(on) = 4.0 mΩ（VGS = 8 V、ID = 21 A）\n?高性能技術(shù)可實(shí)現(xiàn)極低的 rDS(on)\n?100% 經(jīng)過 UIL 測試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

文件：5.92712 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

Spacial CRN plain door w/o mount.plate. H800xW600xD300 IP66 IK10 RAL7035..

文件：100.29 Kbytes 頁數(shù)：2 Pages

SCHNEIDER

施耐德

Spacial CRN plain door with mount.plate. H800xW600xD300 IP66 IK10 RAL7035..

文件：100.3 Kbytes 頁數(shù)：2 Pages

SCHNEIDER

施耐德