絲?。?strong>FDMS86181；Package：PQFN8；MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH

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N 溝道，屏蔽門(mén)極，PowerTrench? MOSFET，100 V，124A，4.2mΩ

N 溝道 MV MOSFET 采用飛兆半導(dǎo)體的先進(jìn) PowerTrench? 工藝制造而成，該工藝集成了柵極屏蔽技術(shù)。 該工藝已經(jīng)過(guò)優(yōu)化，采用業(yè)界最佳的軟體二極管最小化通態(tài)電阻，同時(shí)保持卓越的開(kāi)關(guān)性能。 ?屏蔽柵極 MOSFET 技術(shù)\n? 最大 rDS(on) = 4.2 mΩ（VGS = 10 V、ID = 44 A）\n? 最大 rDS(on) = 12 mΩ（VGS = 6 V、ID = 22 A）\n?ADD\n?Qrr 比其他 MOSFET 供應(yīng)商低 50%\n?減少了開(kāi)關(guān)噪音/EMI\n?MSL1 強(qiáng)健封裝設(shè)計(jì)\n?100% 經(jīng)過(guò) UIL 測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

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N-Channel Enhancement MOSFET

Application | ? Load switch | ? High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate ? DC/DC Power Supplies |

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N-Channel Shielded Gate PowerTrench? MOSFET 100V, 124A, 4.2mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. ?Shielded Gate MOSFET Technology\n? Optimized RDS* Qg Ratio\n? 50% lower Qrr than other MOSFET suppliers\n? Reduces Switching Spike (overshoot)\n?Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A\n?Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A\n?Lowers switching noise/EMI\n?MSL1 robust package design\;

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安森美半導(dǎo)體