30V N-Channel PowerTrench SyncFET?

General Description The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode usin

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無錫固電

N-channel Advanced Mode Power MOSFET

Features ? VDS= 40V, ID= 150A RDS(ON)

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BYCHIP

百域芯

Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ■ 11.5 A, 30 V. RDS(ON) = 0.010 W @ VGS = 10 V RDS(ON

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FAIRCHILD

仙童半導(dǎo)體

30V N-Channel MOSFET

Features ? Ultra-low gate charge ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 12 A RDS(ON)

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UMW

友臺半導(dǎo)體

Single N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? 12.5 A, 30 V RDS(ON) = 9.5 m? @ VGS =

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FAIRCHILD

仙童半導(dǎo)體