N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features ? 46 A, 30 V RDS(ON) = 12 m

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=46A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 30V, ID= 80A RDS(ON)

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BYCHIP

百域芯

30V N-Channel PowerTrench MOSFET

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FAIRCHILD

仙童半導(dǎo)體

30V N溝道PowerTrench? MOSFET

此N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導(dǎo)通阻抗并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 ?46 A，30 V。\n?RDS(on) = 12 mΩ @ VGS = 10 V\n?RDS(ON) = 14 mΩ @ VGS = 4.5 V\n?低柵極電荷\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON);

ONSEMI

安森美半導(dǎo)體