N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：371.47 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：371.47 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 200V, ID= 30 A RDS(ON)

文件：1.89214 Mbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：371.47 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=4.5A@ TC=25℃ ·Drain Source Voltage : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.55 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 200V, ID= 30 A RDS(ON)

文件：1.35905 Mbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

絲印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features ? Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：995.86 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺(tái)舟電子

功率 MOSFET，N 溝道，UniFETTM，200V，4.5A，800m?，DPAK

UniFETTM MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形技術(shù)和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強(qiáng)度。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及燈用電子鎮(zhèn)流器。 ?RDS(on) = 600m? （典型值）（VGS = 10V, ID = 2.3A 時(shí)）\n?低柵極電荷（典型值 4.7nC)\n?低 Crss（典型值 6.3pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

MOSFET N-CH 200V 4.5A D-PAK

ONSEMI

安森美半導(dǎo)體