30V N-Channel PowerTrench SyncFET

General Description The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky d

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=88A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

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30V N-Channel PowerTrench MOSFET

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30V N-Channel PowerTrench? SyncFET?

General Description The FDS6688AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688AS includes an integrated Schottky dio

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