Single N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? 12.5 A, 30 V RDS(ON) = 9.5 m? @ VGS =

文件：102.87 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

絲?。?a target="_blank" title="Marking" href="/fds6680/marking.html">FDS6680；Package：SOP-8；30V N-Channel MOSFET

Features ? Ultra-low gate charge ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability (VGS = 10V) VDS (V) =30V ID = 12 A RDS(ON)

文件：408.77 Kbytes 頁數(shù)：6 Pages

UMW

友臺半導體

Single N-Channel, Logic Level, PowerTrench? MOSFET

文件：202.11 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

N-Channel Enhancement Mode Power MOSFET

Features ? VDS= 20V, ID= 10 A RDS(ON)

文件：1.76729 Mbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

文件：551.45 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench SyncFET

General Description The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky dio

文件：551.45 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

Single N-Channel, Logic Level, PowerTrench? MOSFET

文件：202.11 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench SyncFET

文件：1.01191 Mbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

單 N 溝道，邏輯電平，PowerTrench? MOSFET，30V，12.5A，9.5mΩ

該N溝道邏輯電平MOSFET采用飛兆半導體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導通阻抗并保持卓越開關(guān)性能而定制的。這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?12.5 A，30 V\n?RDS(ON) = 9.5 mΩ @ VGS = 10 V\n?RDS(ON) = 13 mΩ @ VGS = 4.5 V\n?超低柵極電荷\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力;

ONSEMI

安森美半導體