絲?。?strong>FDD8796；Package：TO-252；25V N -Channel MOSFET

Features Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V Low gate resistance VDS(V) =25V ID =35A (VGS = 10V) RDS(ON)

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UMW

友臺(tái)半導(dǎo)體

N-Channel PowerTrench? MOSFET 25V, 35A, 5.7mOhm

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ?

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=35A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無(wú)錫固電

N 溝道，PowerTrench? MOSFET，25V，35A，5.7mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開(kāi)關(guān)PWM控制器來(lái)改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計(jì)的。 已針對(duì)低柵極電荷、低rDS(ON)和高速開(kāi)關(guān)進(jìn)行了優(yōu)化。 ?VGS = 10V，ID = 35A時(shí)，最大rDS(on) = 5.7 mΩ\n?VGS = 4.5V，ID = 35A時(shí)，最大rDS(on) = 8.0 mΩ\n?低柵極電荷： Qg(10) = 37nC（典型值），VGS = 10V\n?低柵極電阻\n?雪崩額定值，100%經(jīng)過(guò)測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體