| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:69.65 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N-Channel Power MOSFETs, 12A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V 文件:177.14 Kbytes 頁數(shù):6 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-Channel Power MOSFETs, 12A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V 文件:177.14 Kbytes 頁數(shù):6 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-CHANNEL POWER MOSFETS FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (Standard) 文件:212.01 Kbytes 頁數(shù):5 Pages | SAMSUNG 三星 | SAMSUNG | ||
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:69.65 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI |
技術(shù)參數(shù)
- OPN:
IRF100B201
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
100 V
- RDS (on) @10V max:
4.2 m?
- ID @25°C max:
192 A
- QG typ @10V:
170 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
263 |
7000 |
詢價 | |||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
IR |
TO |
1100 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
0 |
詢價 | ||||||
20+ |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||||
IR |
23+ |
SOP-8 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
INFINEON/只做原 |
21+ |
TO252 |
10219 |
原裝正品,全力支持實單 |
詢價 | ||
英飛凌 |
23+ |
TO-220 |
30000 |
原裝正品,假一罰十 |
詢價 |
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