| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：69.14 Kbytes 頁數(shù)：7 Pages | INTERSIL | INTERSIL | ||
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：69.14 Kbytes 頁數(shù)：7 Pages | INTERSIL | INTERSIL | ||
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：69.14 Kbytes 頁數(shù)：7 Pages | INTERSIL | INTERSIL | ||
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：69.14 Kbytes 頁數(shù)：7 Pages | INTERSIL | INTERSIL | ||
絲?。?a target="_blank" title="Marking" href="/irf4905/marking.html">IRF4905；Package：TO-220；-55V P-Channel MOSFET Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON) 文件：554.37 Kbytes 頁數(shù)：8 Pages | UMW 友臺半導體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf5305/marking.html">IRF5305；Package：TO-220；-60V P-Channel MOSFET Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON) 文件：723.45 Kbytes 頁數(shù)：8 Pages | UMW 友臺半導體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf5305s/marking.html">IRF5305S；Package：TO-263；-55V P-Channel MOSFET Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON) 文件：3.58041 Mbytes 頁數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON) 文件：1.48095 Mbytes 頁數(shù)：8 Pages | UMW 友臺半導體 | UMW | ||
絲印：IRF7103；Package：SOP-8；Dual N-Channel MOSFET Features * VDs (v= 50V * RDpsON) 文件：420.2 Kbytes 頁數(shù)：9 Pages | UMW 友臺半導體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7104/marking.html">IRF7104；Package：SOP-8；-30V Dual P-Channel MOSFET Benefits ? VDS (V)= -30V ? ID = -2.3A ? RDS(ON) 文件：682.91 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI |
技術參數(shù)
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 m?
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
263 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
263 |
7000 |
詢價 | |||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR-韓國產(chǎn) |
25+ |
TO-220 |
16402 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
INFINEON |
22+ |
TO-252 |
88490 |
絕對真實庫存 原裝正品 |
詢價 | ||
IR |
2022+ |
45 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | |||
IR |
1725+ |
? |
7500 |
只做原裝進口,假一罰十 |
詢價 | ||
IR |
26+ |
SOP-8 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
IR |
兩年內(nèi) |
NA |
658 |
實單價格可談 |
詢價 |
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