N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

文件：165.53 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ? Low RDs

文件：209.79 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：68.86 Kbytes 頁數(shù)：7 Pages

INTERSIL

Nanosecond Switching Speeds

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：135.19 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

High Speed Applications

DESCRIPTION ? Drain Current ID=5A@ TC=25℃ ? Drain Source Voltage- : VDSS= 200V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) ? High Speed Applications APPLICATIONS ? Switching power supplies

文件：48.23 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Power Mosfets

文件：154.1 Kbytes 頁數(shù)：5 Pages

ARTSCHIP

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

HiRel MOSFETs

\n優(yōu)勢:;

Infineon

英飛凌

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Renesas

瑞薩

N-Channel Power MOSFETs, 7A, 150-200V

ONSEMI

安森美半導(dǎo)體