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                >IRF>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          IRF232
          N-Channel Power MOSFETs, 12A, 150-200 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VQS Rated at ±20 V

          文件：177.14 Kbytes 頁數(shù)：6 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF232
          N-CHANNEL POWER MOSFETS
          
FEATURES
? Low RDS(on)
? Improved inductive ruggedness
? Fsat switching times
? Rugged polysilicon gate cell structure
? Low input capacitance
? Extended safe operating area
? Improved high temperature reliability
? TO-3 package (Standard)
          文件：212.01 Kbytes 頁數(shù)：5 Pages
          SAMSUNG
          三星
          

          IRF232
          8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
          
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica
          文件：69.65 Kbytes 頁數(shù)：7 Pages
          INTERSIL
          

          IRF232
          N-Channel Power MOSFETs, 12 A, 150-200 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VQS Rated at ±20 V
●
          文件：106.61 Kbytes 頁數(shù)：3 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          IRF233
          N-Channel Power MOSFETs, 12 A, 150-200 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VQS Rated at ±20 V
●
          文件：106.61 Kbytes 頁數(shù)：3 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          IRF233
          N-Channel Power MOSFETs, 12A, 150-200 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VQS Rated at ±20 V

          文件：177.14 Kbytes 頁數(shù)：6 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF233
          N-Channel Power MOSFETs, 12 A, 150-200 V
          
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VQS Rated at ±20 V
●
          文件：106.61 Kbytes 頁數(shù)：3 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          IRF233
          N-CHANNEL POWER MOSFETS
          
FEATURES
? Low RDS(on)
? Improved inductive ruggedness
? Fsat switching times
? Rugged polysilicon gate cell structure
? Low input capacitance
? Extended safe operating area
? Improved high temperature reliability
? TO-3 package (Standard)
          文件：212.01 Kbytes 頁數(shù)：5 Pages
          SAMSUNG
          三星
          

          IRF233
          8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
          
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica
          文件：69.65 Kbytes 頁數(shù)：7 Pages
          INTERSIL
          

          IRF234
          Nanosecond Switching speeds
          
DESCRIPTION
? Drain Current ID=8.1A@ TC=25℃
? Drain Source Voltage-
   : VDSS= 250V(Min)
? Static Drain-Source On-Resistance
   : RDS(on) =0.45Ω(Max)
? Nanosecond Switching speeds
APPLICATIONS
? Switching power supplies
? Switching converters,motor driver,relay driver
? Drivers for high-
          文件：48.41 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • OPN：
            IRF100B201
          • Qualification：
            Non-Automotive
          • Package name：
            TO220
          • VDS max：
            100 V
          • RDS (on) @10V max：
            4.2 m?
          • ID  @25°C max：
            192 A
          • QG typ @10V：
            170 nC
          • Polarity：
            N
          • VGS(th) min：
            2 V
          • VGS(th) max：
            4 V
          • VGS(th)：
            3 V
          • Technology：
            IR MOSFET?
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



          IR
          		

          22+
          		

          263
          		

          6000
          		

          終端可免費(fèi)供樣,支持BOM配單
          		
詢價
          

          



          IR
          		

          23+
          		

          263
          		

          8000
          		

          專注配單,只做原裝進(jìn)口現(xiàn)貨
          		
詢價
          

          



          IR
          		

          23+
          		

          263
          		

          7000
          		

          		
詢價
          

          



          SAMSUNG
          		

          25+
          		

          TO-220
          		

          2987
          		

          只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
          		
詢價
          

          



          IR
          		

          25+
          		

          TO-3P
          		

          18000
          		

          原廠直接發(fā)貨進(jìn)口原裝
          		
詢價
          

          



          IR
          		

          25+
          		

          TO263
          		

          783
          		

          旗艦店
          		
詢價
          

          



          VishayDale
          		

          新
          		

          		

          5
          		

          全新原裝 貨期兩周
          		
詢價
          

          



          IR-韓國產(chǎn)
          		

          25+
          		

          TO-220
          		

          16402
          		

          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          		
詢價
          

          



          		

          20+
          		

          		

          36800
          		

          原裝優(yōu)勢主營型號-可開原型號增稅票
          		
詢價
          

          



          原廠
          		

          2023+
          		

          模塊
          		

          600
          		

          專營模塊,繼電器,公司原裝現(xiàn)貨
          		
詢價
          

            
          
        
          
        
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            更新時間2026-1-19 14:03:00
        
          
        
          
          
          
            
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