| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF2204 | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET?Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp 文件:141.6 Kbytes 頁數(shù):9 Pages | IRF | IRF | |
IRF2204 | N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3.6m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件:338.51 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IRF2204 | 40V 單個 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝 \n優(yōu)勢:\n? 符合 RoHS\n? 具有業(yè)內先進的品質\n? 動態(tài)的dv/dt額定值\n? 快速開關\n? 完全雪崩額定值\n? 175°C 的工作溫度; | Infineon 英飛凌 | Infineon | |
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im 文件:224.58 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description This HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features 文件:256.45 Kbytes 頁數(shù):12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im 文件:224.58 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching a 文件:263.11 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description This HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features 文件:256.45 Kbytes 頁數(shù):12 Pages | IRF | IRF | ||
Advanced Process Technology 文件:263.64 Kbytes 頁數(shù):9 Pages | IRF | IRF | ||
HEXFET? Power MOSFET 文件:263.64 Kbytes 頁數(shù):9 Pages | IRF | IRF |
技術參數(shù)
- OPN:
IRF2204PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
40 V
- RDS (on) @10V max:
3.6 m?
- ID @25°C max:
210 A
- QG typ @10V:
130 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
24+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
25+ |
QFN |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
25+ |
TO-220 |
6000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
23+ |
TO-220 |
5000 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
2447 |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
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